Full PDF Text Transcription for 2N5452 (Reference)
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2N5452. For precise diagrams, and layout, please refer to the original PDF.
monolithic dual n-channel JFETs designed for • • • H Siliconix Performance Curves NQP See Section 4 • Low and Medium Frequency DiHerential Amplifiers BENEFITS • Minimum S...
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• Low and Medium Frequency DiHerential Amplifiers BENEFITS • Minimum System Error and Calibration *ABSOLUTE MAXIMUM RATINGS (25°C) Any Lead-To-Case Voltage _••.•.••••••••••.... ±100 V Gate-Drain or Gate-Source Voltage .•••.••....••• -50 V Gate Current .••.••.••••••••••••••••••••.... 50 rnA Total Device Dissipation at (Each Side) ............•250 mW 85°C Case Temperature (Both Sides) ....•..•....500 mW Power Derating (Each Side) ••••••••••••.• 2.86 mWrC (Both Sides) ••••.•••.•••••• 4.3 mWrC 5 mV Offset Maximum (2N5452) • Simplifies Amplifier Design Output Conductance Less that 1 J./mho TO·71 See Section 6 ~~G, G2 Storage Te
2N5452 Datasheet
