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IRFD210 - N-Channel Power MOSFET (Intersil Corporation)
IRFD210 Data Sheet July 1999 File Number 2316.3 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and gua.

IRFD210PBF - HEXFET Power MOSFET (International Rectifier)
PD- 95924 IRFD210PbF www..com • Lead-Free www.irf.com 1 10/27/04 IRFD210PbF www..com 2 www.irf.com IRFD210PbF www.Dat.

IRFD211 - FIELD EFFECT POWER TRANSISTOR (GE)
~~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFD21 0,211 D82BN2,M2 0.6 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 il This series of N-Channel Enhancement-mode .

IRFD212 - FIELD EFFECT POWER TRANSISTOR (GE)
~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel Enhancement-mode Power MOSFET.

IRFD214 - Power MOSFET (International Rectifier)
HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple D.

IRFD220 - N-Channel Power MOSFET (Intersil Corporation)
IRFD220 Data Sheet July 1999 File Number 2317.3 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field.

IRFD220PBF - Power MOSFET (International Rectifier)
www..com PD- 95917 IRFD220PbF • Lead-Free www.irf.com 1 10/27/04 IRFD220PbF 2 www.irf.com IRFD220PbF www.irf.com 3 IRFD220PbF .

IRFD221 - FIELD EFFECT POWER TRANSISTOR (GE)
~D~~U FIELD EFFECT POWER TRANSISTOR IRFD220,221 D82CN2,M2 0.8 AMPERES 200, 150 VOLTS RDS(ON) = 0.8 il This series of N-Channel Enhancement-mode Powe.

IRFD222 - FIELD EFFECT POWER TRANSISTOR (GE)
~~D~~ FIELD EFFECT POWER TRANSISTOR IRFD222,223 0.7 AMPERES 200, 150 VOLTS RDS(ON) =.1.20 This series of N-Channel Enhancement-mode Power MOSFETs ut.

IRFD223 - FIELD EFFECT POWER TRANSISTOR (GE)
~~D~~ FIELD EFFECT POWER TRANSISTOR IRFD222,223 0.7 AMPERES 200, 150 VOLTS RDS(ON) =.1.20 This series of N-Channel Enhancement-mode Power MOSFETs ut.