* internal gate-source zener diode VN2222KM 125 VN2222L 156 UNITS °C/W 6-89 VN2222KM, VN2222L ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VaS(th) Vas =OV,10=100jJ.A Vos = Vas, 10 = 1 mA Gate-Body Leakage
VN2222L
Siliconix
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N-channel enhancement-mode mos transistors.
flCrSiliconix ~ incorporated VN2222KM, VN2222L N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (..
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