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VQ2001P - P-Channel Enhancement-Mode MOS Transistors

Download the VQ2001P datasheet PDF. This datasheet also covers the VQ2001J variant, as both devices belong to the same p-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold:.
  • 3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF Benefits D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Switching D Easily Driven Without Buffer.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VQ2001J-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VQ2001P
Manufacturer Siliconix
File Size 68.61 KB
Description P-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VQ2001P Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VQ2001P P-Channel Enhancement-Mode MOSFET Transistors Vishay Siliconix
VQ2001J P-Channel Enhancement-Mode MOSFET Transistors Vishay Siliconix

Other Datasheets by Siliconix

Part Number Description
VQ2001 P-Channel Enhancement-Mode MOS Transistor
VQ2001J P-Channel Enhancement-Mode MOS Transistors
VQ2000 P-Channel Enhancement-Mode MOS Transistor
VQ2004 P-Channel Enhancement-Mode MOS Transistor
VQ2006 P-Channel Enhancement-Mode MOS Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number VP0300B VP0300L VP0300M VQ2001J VQ2001P V(BR)DSS Min (V) –30 rDS(on) Max (W) 2.5 @ VGS = –12 V 2.5 @ VGS = –12 V 2.5 @ VGS = –12 V 2 @ VGS = –12 V 2 @ VGS = –12 V VGS(th) (V) –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 ID (A) –1.25 –0.32 –0.5 –0.6 –0.6 Features D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold: –3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF Benefits D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Switching D Easily Driven Without Buffer Applications D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.