Datasheet4U Logo Datasheet4U.com

SSF1109 - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • TO220 .
  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Datasheet Details

Part number SSF1109
Manufacturer Silikron
File Size 320.72 KB
Description MOSFET
Datasheet download datasheet SSF1109 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSF11NS60 600V N-Channel MOSFET GOOD-ARK
SSF11NS60D N-Channel MOSFET GOOD-ARK
SSF11NS65 650V N-Channel MOSFET GOOD-ARK
SSF1016 Power switching application Silikron Semiconductor Co
SSF1020 Power switching application Silikron Semiconductor Co

Other Datasheets by Silikron

Part Number Description
SSF1116 MOSFET
SSF1116A MOSFET
SSF1122 MOSFET
SSF1122D MOSFET
SSF11NS60F N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
                                 Main Product Characteristics: VDSS 110V RDS(on) 6.7mohm(typ.) ID 130A Features and Benefits: TO220  „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSF1109  Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.