SSF1116
Description
: The SSF1116 is a new generation of high voltage and low current N- Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1116 is assembled in high reliability and qualified assembly house.
Application:
- Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC
Continuous drain current,VGS@10V
ID@Tc=100ْC Continuous drain current,VGS@10V
IDM PD@TC=25ْC
Pulsed drain current ① Power dissipation
Linear derating factor
VGS EAS EAR dv/dt
Gate-to-Source voltage Single pulse avalanche energy ②
Repetitive avalanche energy Peak diode recovery voltage
TJ TSTG
Operating Junction and Storage Temperature Range
SSF1116 TOP View (T0-220)
Max. 75 61 300 273 1.5 ±20 300 TBD 31
- 55 to...
