Datasheet Summary
Main Product Characteristics:
VDSS
-12V
RDS(on) 14.4 mΩ(typ.)
ID -12A
DFN2x2-6L Pin Assignment
Schematic diagram
Features and Benefits:
- Advanced trench MOSFET process technology
- Special designed for battery charge, load switching in cellular handset and general ultraportable applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in...