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Silikron

SSF1502G5 Datasheet Preview

SSF1502G5 Datasheet

MOSFET

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Main Product Characteristics:
VDSS
RDS(on)
150V
0.14Ω(typ)
ID 6A
SOT223
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175operating temperature
SSF1502G5
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
6
4.2
24
12
0.08
150
±20
-55 to + 175
Units
A
W
W/°C
V
V
°C
©Silikron Semiconductor CO.,LTD.
2011.12.11
www.silikron.com
Version : 1.0
page 1 of 8




Silikron

SSF1502G5 Datasheet Preview

SSF1502G5 Datasheet

MOSFET

No Preview Available !

Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-Ambient (t ≤ 10s)
Junction-to-Ambient (PCB mounted, steady-state)
Typ.
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
150
2
-100
Typ.
0.14
0.32
2.63
30.9
6.5
10.6
11.8
5.7
29.3
6.0
1230
47
31
Max.
0.2
4
1
50
100
Units
V
Ω
V
μA
nA
nC
nS
pF
SSF1502G5
Max.
13
62
40
Units
/W
/W
/W
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 2.8A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS =120V, VGS =0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 2.8A
VDD=75V
VGS = 10V
VGS=10V, VDS =75V,
RL=26Ω,
RGEN=6Ω
ID =2.8A
VGS = 0V
VDS = 75V
ƒ =1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
——
0.81
54.8
133.9
Max.
6
24
1.5
Units
A
A
V
nS
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=2.8A, VGS=0V,TJ= 25°C
TJ = 25°C, IF =2.8A, di/dt =
100A/μs
©Silikron Semiconductor CO.,LTD.
2011.12.11
www.silikron.com
Version : 1.0
page 2 of 8


Part Number SSF1502G5
Description MOSFET
Maker Silikron
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