SSF3002EG1 - MOSFET

Silikron

General Description

It utilizes the latest trench processing techniquesto achieve the high cell density and reduces the on-resistance with high repetitiveavalanche rating.

Key Features

andBenefits:.
Advanced trench MOSFET process technology.
Special designed for PWM, load switching and general purpose.

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SSF3002EG1 mosfet by Silikron - Datasheet Preview

Datasheet Details

Part number	SSF3002EG1
Manufacturer	Silikron
File Size	437.25 KB
Description	MOSFET
Datasheet	SSF3002EG1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS 30V RDS(on) 1ohm(typ.) ID 0.5A① SOT23 Features andBenefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  ESD Protected, HBM 1KV SSF3002EG1 Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniquesto achieve the high cell density and reduces the on-resistance with high repetitiveavalanche rating.