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SSF4N60 - MOSFET

General Description

The SSF4N60 is a new generation of high voltage N Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior sw

Key Features

  • Extremely high dv/dt capability.
  • Low Gate Charge Qg results in Simple Drive Requirement.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatability Vdss = 600V Id = 4A Rdson = 2.3Ω (typ. ).

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Datasheet Details

Part number SSF4N60
Manufacturer Silikron
File Size 622.75 KB
Description MOSFET
Datasheet download datasheet SSF4N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSF4N60 Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement  100% avalanche tested  Gate charge minimized  Very low intrinsic capacitances  Very good manufacturing repeatability Vdss = 600V Id = 4A Rdson = 2.3Ω (typ.) Description The SSF4N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.