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SSF5N60F - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • TO220F .
  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSF5N60F
Manufacturer Silikron
File Size 338.29 KB
Description MOSFET
Datasheet download datasheet SSF5N60F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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                                 Main Product Characteristics: VDSS 600V RDS(on) 2ohm(typ.) ID 4A Features and Benefits: TO220F  „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature SSF5N60F  Marking and pin Assignment      Schematic diagram    Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.