SSF5N60G - MOSFET

Silikron

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

TO-251.
Advanced MOSFET process technology.
Special designed for PWM, load switching and general purpose.

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SSF5N60G mosfet by Silikron - Datasheet Preview

Datasheet Details

Part number	SSF5N60G
Manufacturer	Silikron
File Size	464.45 KB
Description	MOSFET
Datasheet	SSF5N60G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS RDS(on) 600V 1.88Ω (typ.) ID 5A Features and Benefits: TO-251  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF5N60G Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.