SSF2810EH2 Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
SSF2810EH2 Key Features
- Advanced MOSFET process technology
- Ultra low on-resistance with low gate charge
- High Power and current handing capability
- 150℃ operating temperature
- G/S ESD protect 2KV (HBM)