SSF3960J7-HF - MOSFET

Silikron Semiconductor

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

Advanced MOSFET process technology.
Special designed for PWM, load switching and general purpose.

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SSF3960J7-HF mosfet by Silikron Semiconductor - Datasheet Preview

Datasheet Details

Part number	SSF3960J7-HF
Manufacturer	Silikron Semiconductor
File Size	545.39 KB
Description	MOSFET
Datasheet	SSF3960J7-HF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSF3960J7-HF Main Product Characteristics: VDSS 30V RDS(on) 1.9mΩ (typ.) ID 130A Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature PPAK5*6-8L Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.