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SSF4N60F - MOSFET

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • TO-220F.
  • Advanced MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSF4N60F
Manufacturer Silikron Semiconductor
File Size 496.58 KB
Description MOSFET
Datasheet download datasheet SSF4N60F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS RDS(on) 600V 1.9Ω(typ.) ID 4A Features and Benefits: TO-220F  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF4N60F Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.