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SSPL1010 - Schottky Barrier Rectifier

General Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Key Features

  • TO220.
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSPL1010
Manufacturer Silikron Semiconductor
File Size 622.59 KB
Description Schottky Barrier Rectifier
Datasheet download datasheet SSPL1010 Datasheet

Full PDF Text Transcription for SSPL1010 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSPL1010. For precise diagrams, and layout, please refer to the original PDF.

Main Product Characteristics: VDSS 100V RDS(on) 8.9mohm(typ.) ID 88A ① Features and Benefits: TO220  Advanced Process Technology  Special designed for PWM, load switchi...

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 Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSPL1010 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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