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SSPL1022 - N-Channel enhancement mode power field effect transistors

General Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Key Features

  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSPL1022
Manufacturer Silikron Semiconductor
File Size 333.12 KB
Description N-Channel enhancement mode power field effect transistors
Datasheet download datasheet SSPL1022 Datasheet

Full PDF Text Transcription for SSPL1022 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSPL1022. For precise diagrams, and layout, please refer to the original PDF.

Main Product Characteristics: VDSS 100V RDS(on) 21mohm(typ.) ID 57A Features and Benefits: „ Advanced Process Technology „ Special designed for PWM, load switching and g...

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ed Process Technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature TO220 SSPL1022 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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