SSPL1090 N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

Description

Main Product Characteristics: VDSS RDS(on) 100V 75mΩ (typ.) ID 17A ① .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

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Datasheet Specifications

Part number: SSPL1090
Manufacturer: SilikrON Semiconductor ↗
File Size: 575.83 KB
Datasheet: SSPL1090-SilikronSemiconductor.pdf
Description: N-Channel enhancement mode power field effect transistors

Features

* TO-220
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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SSPL1090 N-Channel enhancement mode power field effect transistors Silikron Semiconductor

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