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SSPL2015 - N-Channel enhancement mode power field effect transistors

General Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Key Features

  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSPL2015
Manufacturer Silikron Semiconductor
File Size 544.07 KB
Description N-Channel enhancement mode power field effect transistors
Datasheet download datasheet SSPL2015 Datasheet

Full PDF Text Transcription for SSPL2015 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSPL2015. For precise diagrams, and layout, please refer to the original PDF.

Main Product Characteristics: VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and...

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nced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature TO220 SSPL2015 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are

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