Full PDF Text Transcription for SSPL2090 (Reference)
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SSPL2090. For precise diagrams, and layout, please refer to the original PDF.
Main Product Characteristics: VDSS RDS(on) 200V 80mΩ(typ.) ID 30A TO220 Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switc...
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anced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature SSPL2090 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
SSPL2090 Datasheet
