SSPL50N30H transistors equivalent, n-channel enhancement mode power field effect transistors.
TO-247
* Advanced MOSFET process technology
* Special designed for PWM, load switching and
general purpose applications
* Ultra low on-resistance with low .
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating t.
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power.
Image gallery
TAGS
Download