Full PDF Text Transcription for SSPL50N30H (Reference)
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SSPL50N30H. For precise diagrams, and layout, please refer to the original PDF.
Main Product Characteristics: VDSS RDS(on) 300V 45mΩ(typ.) ID 50A ① Features and Benefits: TO-247 Advanced MOSFET process technology Special designed for PWM, load sw...
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Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSPL50N30H Marking and Pin Schematic Diagram Assignment Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SSPL50N30H Datasheet
