Full PDF Text Transcription for SSPL5505 (Reference)
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SSPL5505. For precise diagrams, and layout, please refer to the original PDF.
Main Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.) ID 160A ① Features and Benefits: TO220 Advanced Process Technology Special designed for PWM, load switchi...
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Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature SSPL5505 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
SSPL5505 Datasheet
