SSS1004A7 Datasheet - Silikron Semiconductor

N-Channel enhancement mode power field effect transistors

* TO-263-7L

* Advanced Process Technology

* Special designed for PWM, load switching and general purpose applications

* Ultra low on-resistance with low gate charge

* Fast switching and reverse body recovery

* 175℃ operating temperature SSS1004A7 1, Gate 2~3,5~7 Source 4,8 Drai

SSS1004A7

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N-channel enhancement mode power field effect transistors.

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