Datasheet Details
| Part number | SSF2715 |
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| Manufacturer | Silikron Semiconductor Co |
| File Size | 470.74 KB |
| Description | Extremely high dv/dt capability |
| Datasheet |
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| Part number | SSF2715 |
|---|---|
| Manufacturer | Silikron Semiconductor Co |
| File Size | 470.74 KB |
| Description | Extremely high dv/dt capability |
| Datasheet |
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SSF2715 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
SSF2715 TOP View (TO220) Application ■ ■ ■ High current, high speed switching Lighting Ideal for off-line power supply, adaptor, PFC Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ① ① ③ ② ① Max.
5 3 20 80 0.67 ±30 120 5 8.5 4.5 –55 to +150 Units A W W/ ْC V mJ A mJ V/ns ْC Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient Min.
www.DataSheet4U.com SSF2715.
| Part Number | Description |
|---|---|
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| SSF2300A | Battery protection |
| SSF2300B | Battery protection |
| SSF2301 | PWM applications |
| SSF2301B | PWM applications |
| SSF2301C | PWM applications |
| SSF2302 | Battery protection |
| SSF2306 | Battery protection |
| SSF2306B | Battery protection |