SSF2715

The SSF2715 is Extremely high dv/dt capability designed by Silikron Semiconductor Co.

Product Overview

Silikron Semiconductor Co

Datasheet Details

Part number	SSF2715
Manufacturer	SilikrON Semiconductor Co
File Size	470.74 KB
Description	Extremely high dv/dt capability
Datasheet	SSF2715_SilikronSemiconductorCo.pdf
Additional preview pages of the SSF2715 datasheet.

Product details

Description

SSF2715 is a new generation of high voltage N Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. High current, high speed switching Lighting Ideal

Features

Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability VDSS = 500V ID = 5A RDS(ON) = 1.2Ω.

📁 Similar Datasheet

SSF20K8NE-C - N-Channel Enhancement Mode Power MOSFET (SeCoS)
SSF20N50UH - MOSFET (Silikron)
SSF20N60H - MOSFET (Silikron)
SSF20N60S - 600V N-Channel MOSFET (Super Semiconductor)
SSF20NS60 - MOSFET (Silikron)
SSF20NS60F - 600V N-Channel MOSFET (GOOD-ARK)
SSF20NS65 - MOSFET (Silikron)
SSF20NS65F - MOSFET (Silikron)

Other Datasheets by Silikron Semiconductor Co

SSF2701 - High Power and current handing capability
SSF2783 - DC-DC Conversion Circuits
SSF2300A - Battery protection
SSF2300B - Battery protection
SSF2301 - PWM applications
SSF2301B - PWM applications

Published: Mar 6, 2010 |