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SSF2715 Datasheet Extremely high dv/dt capability

Manufacturer: Silikron Semiconductor Co

Datasheet Details

Part number SSF2715
Manufacturer Silikron Semiconductor Co
File Size 470.74 KB
Description Extremely high dv/dt capability
Datasheet download datasheet SSF2715 Datasheet

General Description

SSF2715 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.

SSF2715 TOP View (TO220) Application ■ ■ ■ High current, high speed switching Lighting Ideal for off-line power supply, adaptor, PFC Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ① ① ③ ② ① Max.

5 3 20 80 0.67 ±30 120 5 8.5 4.5 –55 to +150 Units A W W/ ْC V mJ A mJ V/ns ْC Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient Min.

Overview

www.DataSheet4U.com SSF2715.

Key Features

  • Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability VDSS = 500V ID = 5A RDS(ON) = 1.2Ω.