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SM1901PSQG Datasheet Preview

SM1901PSQG Datasheet

P-Channel MOSFET

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SM1901PSQG
P-Channel Enhancement Mode MOSFET
Features
• -20V/-1A
RDS(ON)=525mΩ(max.)@VGS=-4.5V
RDS(ON)=840mΩ(max.)@VGS=-2.5V
RDS(ON)=1450mΩ(max.)@VGS=-1.8V
• ESD Protection
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
G
S
D
Pin 1
DFN0.6x1-3_EP
D
Applications
• Optimized for load Switch Applications
• Optimized for General Purpose Switching
Applications.
• Battery Applications.
• Handheld and Mobile Applications.
G
S
P-Channel MOSFET
Ordering and Marking Information
SM1901PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
QG : DFN0.6x1-3_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM1901PS QG :
01
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are
fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL
classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl
does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest
version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor Inc.
Rev. A.1 - December, 2019
1
www.sinopowersemi.com




Sinopower

SM1901PSQG Datasheet Preview

SM1901PSQG Datasheet

P-Channel MOSFET

No Preview Available !

SM1901PSQG
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Common Ratings
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
ID Continuous Drain Current
IDM a Pulsed Drain Current
PD Maximum Power Dissipation
Rb
qJA
Thermal Resistance-Junction to Ambient
Note aPulse width limited by max. junction temperature.
Note bSurface Mounted on 1in2 pad area.
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
Steady state
Rating
-20
±12
150
-55 to 150
-0.8
-1
-0.8
-4
0.89
0.57
140
Unit
V
°C
A
A
W
°C/W
Copyright © Sinopower Semiconductor Inc.
Rev. A.1 - December, 2019
2
www.sinopowersemi.com


Part Number SM1901PSQG
Description P-Channel MOSFET
Maker Sinopower
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