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SM2302NSA Datasheet Preview

SM2302NSA Datasheet

N-Channel Enhancement Mode MOSFET

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SM2302NSA
Features
· 20V/6A,
RDS(ON)= 26mW(max.) @ VGS=4.5V
RDS(ON)= 37mW(max.) @ VGS=2.5V
· ESD Protected
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of SOT-23-3
D
Applications
G
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
S
N-Channel MOSFET
SM2302NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
A : SOT-23-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM2302NS A : A02XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - April, 2014
1
www.sinopowersemi.com




Sinopower

SM2302NSA Datasheet Preview

SM2302NSA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SM2302NSA
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
Parameter
ID* Continuous Drain Current (VGS=4.5V)
IDM*
IS*
TJ
TST G
300ms Pulsed Drain Current (VGS=4.5V)
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RqJA* Thermal Resistance-Junction to Ambient
Note*Surface Mounted on 1in2 pad area, t £ 10sec.
TA=25°C
TA=100°C
TA=25°C
TA=100°C
t £ 10s
Steady State
Rating
20
±12
6
3.7
20
1.4
150
-55 to 150
1.4
0.5
90
150
Unit
V
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSD a
trr b
Diode Forward Voltage
Reverse Recovery Time
Qrr b Reverse Recovery Charge
Test Conditions
VGS=0V, IDS=250mA
VDS=16V, VGS=0V
TJ=85°C
VDS=VGS, IDS =250mA
VGS=±10V, VDS=0V
VGS=4.5V, IDS=6A
VGS=2.5V, IDS=5A
ISD=1.3A, VGS=0V
ISD=4A, dlSD/dt=100A/ms
SM2302NSA
Min. Typ. Max.
20 -
-
--1
- - 30
0.5 0.7 1.5
- - ±10
- 22 26
- 29 37
- 0.8 1.3
- 16 -
- 10 -
Unit
V
mA
V
mA
mW
V
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - April, 2014
2
www.sinopowersemi.com


Part Number SM2302NSA
Description N-Channel Enhancement Mode MOSFET
Maker Sinopower
Total Page 11 Pages
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