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SM2318NSA Datasheet Preview

SM2318NSA Datasheet

N-Channel Enhancement Mode MOSFET

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SM2318NSA
Features
· 30V/4.8A,
RDS(ON)=40mW(max.) @ VGS=10V
RDS(ON)=48mW(max.) @ VGS=4.5V
RDS(ON)=85mW(max.) @ VGS=2.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of SOT-23-3
D
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
· Load Switch
G
S
N-Channel MOSFET
Ordering and Marking Information
SM2318NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
A : SOT-23-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM2318NS A: A18XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
1
www.sinopowersemi.com




Sinopower

SM2318NSA Datasheet Preview

SM2318NSA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SM2318NSA
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VD S S
VGSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID Continuous Drain Current
ID M
IS
TJ
TSTG
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD Maximum Power Dissipation
RqJA* Thermal Resistance-Junction to Ambient
Note: *Surface Mounted on 1in2 pad area, t £ 10sec.
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t £ 10sec
Steady state
Rating
30
±12
4.8
3.8
19
1
150
-55 to 150
1.4
0.9
90
140
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250mA
IGSS Gate Leakage Current
VGS=±12V, VDS=0V
VGS=10V, IDS=4.8A
RDS(ON) a Drain-Source On-State Resistance VGS=4.5V, IDS=4.4A
VGS=2.5V, IDS=3.3A
Diode Characteristics
VS
a
D
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=1A, VGS=0V
ISD=4A, dlSD/dt=100A/ms
Min. Typ. Max. Unit
30 -
-V
- -1
- - 30 mA
0.5 1 1.5 V
- - ±100 nA
- 33 40
- 38 48 mW
- 60 85
- 0.75 1.1 V
- 9 - ns
- 4.7 - nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
2
www.sinopowersemi.com


Part Number SM2318NSA
Description N-Channel Enhancement Mode MOSFET
Maker Sinopower
Total Page 11 Pages
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