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SM2331PSA Datasheet Preview

SM2331PSA Datasheet

P-Channel Enhancement Mode MOSFET

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SM2331PSA
Features
· -20V/-3.9A,
RDS(ON)= 60mW (Max.) @ VGS=-4.5V
RDS(ON)= 90mW (Max.) @ VGS=-2.5V
RDS(ON)=150mW (Max.) @ VGS=-1.8V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
P-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of SOT-23-3
D
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
G
S
P-Channel MOSFET
Ordering and Marking Information
SM2331PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
A : SOT-23-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM2331PS A :
B31XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
1
www.sinopowersemi.com




Sinopower

SM2331PSA Datasheet Preview

SM2331PSA Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

SM2331PSA
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID* Continuous Drain Current
IDM* 300ms Pulsed Drain Current
IS*
TJ
TSTG
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RqJA* Thermal Resistance-Junction to Ambient
Note: *Surface Mounted on 1in2 pad area, t £ 10sec.
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t £ 10s
Steady state
Rating
-20
±12
-3.9
-3.1
-15.7
-12.6
-1
150
-55 to 150
1.4
0.9
90
125
Unit
V
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-State Resistance
V
a
SD
Diode Forward Voltage
Gate Charge Characteristics b
VGS=0V, IDS=-250mA
VDS=-16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250mA
VGS=±10V, VDS=0V
VGS=-4.5V, IDS=-3.9A
VGS=-2.5V, IDS=-2.5A
VGS=-1.8V, IDS=-1A
ISD=-1A, VGS=0V
-20
-
-
-0.5
-
-
-
-
-
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-3.9A
-
-
-
Typ.
-
-
-
-0.7
-
45
62
95
-0.7
7
0.6
2.5
Max.
-
-1
-30
-1
±10
60
90
150
-1
-
-
-
Unit
V
mA
V
mA
mW
V
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
2
www.sinopowersemi.com


Part Number SM2331PSA
Description P-Channel Enhancement Mode MOSFET
Maker Sinopower
Total Page 11 Pages
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