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SM3023N Datasheet Preview

SM3023N Datasheet

N-Channel MOSFET

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SM3023NSU
®
N-Channel Enhancement Mode MOSFET
Features
· 30V/49A,
RDS(ON)= 11.5mW (max.) @ VGS=10V
RDS(ON)= 17mW (max.) @ VGS=4.5V
· 100% UIS + Rg Tested
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· Moisture Sensitivity Level MSL1
(per JEDEC J-STD-020D)
Applications
Pin Description
D
S
G
Top View of TO-252-2
D
G
· Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
S
N-Channel MOSFET
SM3023NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-2
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM3023NS U :
SM3023N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
1
Rev. A.4 - May, 2018
www.sinopowersemi.com




Sinopower

SM3023N Datasheet Preview

SM3023N Datasheet

N-Channel MOSFET

No Preview Available !

SM3023NSU
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
30
±20
V
150
°C
-55 to 150
20
ID Continuous Drain Current
IDMa Pulsed Drain Current
TC=25°C
TC=100°C
TC=25°C
49
A
31
100
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
TC=25°C
TC=100°C
Steady State
41
W
16
3
°C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
12
A
9.6
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2.5
W
1.6
RqJA
IAS b
EAS b
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
t £ 10s
Steady State
L=0.1mH
L=0.1mH
17
°C/W
50
20
A
20
mJ
Note aPulse width limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
2
Rev. A.4 - May, 2018
www.sinopowersemi.com


Part Number SM3023N
Description N-Channel MOSFET
Maker Sinopower
PDF Download

SM3023N Datasheet PDF






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