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SM4030NHG Datasheet Preview

SM4030NHG Datasheet

N-Channel MOSFET

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SM4030NHG
N-Channel Enhancement Mode MOSFET
Features
• 40V/120A
RDS(ON)=1.3mΩ(max.)@VGS=10V
RDS(ON)=1.6mΩ(max.)@VGS=6V
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
D
S
G
TO-263-2
D
Applications
• Brushed motor drive applications
• BLDC motor drive applications
• Battery powered circuits
• Half-bridge and full-bridge topologies
• Synchronous rectifier applications
G
S
N-Channel MOSFET
Ordering and Marking Information
SM4030NH
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
G : TO-263-2
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM4030NH G :
SM4030NH
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are
fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL
classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl
does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest
version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor Inc.
Rev. A.1 - July, 2019
1
www.sinopowersemi.com




Sinopower

SM4030NHG Datasheet Preview

SM4030NHG Datasheet

N-Channel MOSFET

No Preview Available !

SM4030NHG
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
40
V
±20
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
Continuous Drain Current
ID Continuous Drain Current
IDM b Pulsed Drain Current
TC=25°C
TC=25°C
TC=100°C
TC=25°C
90
120 a
120 a
400
A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
312
W
125
RqJC Thermal Resistance-Junction to Case
Steady State
0.4 °C/W
ID Continuous Drain Current
IDM b Pulsed Drain Current
TA=25°C
TA=70°C
TA=25°C
33
A
26
132
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2.5
W
1.6
Rc
qJA
Thermal Resistance-Junction to Ambient
Steady State
50 °C/W
IAS d Avalanche Current, Single pulse
L=0.5mH
60 A
EAS d Avalanche Energy, Single pulse
L=0.5mH
900 mJ
Note aMax. continuous current is limited by bonding wire.
Note bPulse width limited by max. junction temperature.
Note cSurface mounted on 1in2 pad area, steady state t = 999s.
Note dUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor Inc.
Rev. A.1 - July, 2019
2
www.sinopowersemi.com


Part Number SM4030NHG
Description N-Channel MOSFET
Maker Sinopower
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