SM4070NHKP
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
40
V
±20
TJ Maximum Junction Temperature
175 °C
TSTG Storage Temperature Range
-55 to 175
°C
IS Diode Continuous Forward Current
TC=25°C
21 A
ID Continuous Drain Current
TC=25°C
TC=100°C
48
A
34
IDM Pulse Drain Current
TC=25°C
198 A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
36
W
17.8
RqJC Thermal Resistance-Junction to Case
Steady State
4.2 °C/W
ID Continuous Drain Current
IDM a Pulse Drain Current
TA=25°C
TA=70°C
TA=25°C
12.2
A
10.3
51 A
PD b Maximum Power Dissipation
TA=25°C
TA=70°C
2.3
W
1.6
Rb
qJA
Thermal Resistance-Junction to Ambient
t ≤ 10s
Steady State
25
°C/W
64
IAS c Avalanche Current, Single pulse
L=0.1mH
19
EAS c Avalanche Energy, Single pulse
L=0.1mH
18
Note a：Pulse width is limited by max. junction temperature.
Note b：Surface mounted on 1in2 pad area, steady state t = 999s.
Note c：UIS tested and pulse width limited by maximum junction temperature 175oC (initial temperature Tj=25oC).
A
mJ
Copyright © Sinopower Semiconductor Inc.
Rev. A.3 - November, 2018
2
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