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SM4070NHKP Datasheet Preview

SM4070NHKP Datasheet

N-Channel MOSFET

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SM4070NHKP
N-Channel Enhancement Mode MOSFET
Features
• 40V/48A
RDS(ON)=7.8mΩ(max.)@VGS=10V
RDS(ON)=11.8mΩ(max.)@VGS=4.5V
• 100% UIS + Rg Tested
• ESD Protection
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
• Moisture Sensitivity Level MSL1
(per JEDEC J-STD-020D)
Applications
• Power Management in Desktop Computer or
DC/DC Converters.
Pin Description
DDDD
S SSG
DFN5x6A-8_EP
Pin 1
(5,6,7,8)
DD DD
(4) G
S SS
( 1, 2, 3 )
N-Channel MOSFET
Ordering and Marking Information
SM4070NH
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM4070NH KP :
4070NH
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are
fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL
classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl
does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest
version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor Inc.
Rev. A.3 - November, 2018
1
www.sinopowersemi.com




Sinopower

SM4070NHKP Datasheet Preview

SM4070NHKP Datasheet

N-Channel MOSFET

No Preview Available !

SM4070NHKP
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
40
V
±20
TJ Maximum Junction Temperature
175 °C
TSTG Storage Temperature Range
-55 to 175
°C
IS Diode Continuous Forward Current
TC=25°C
21 A
ID Continuous Drain Current
TC=25°C
TC=100°C
48
A
34
IDM Pulse Drain Current
TC=25°C
198 A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
36
W
17.8
RqJC Thermal Resistance-Junction to Case
Steady State
4.2 °C/W
ID Continuous Drain Current
IDM a Pulse Drain Current
TA=25°C
TA=70°C
TA=25°C
12.2
A
10.3
51 A
PD b Maximum Power Dissipation
TA=25°C
TA=70°C
2.3
W
1.6
Rb
qJA
Thermal Resistance-Junction to Ambient
t 10s
Steady State
25
°C/W
64
IAS c Avalanche Current, Single pulse
L=0.1mH
19
EAS c Avalanche Energy, Single pulse
L=0.1mH
18
Note aPulse width is limited by max. junction temperature.
Note bSurface mounted on 1in2 pad area, steady state t = 999s.
Note cUIS tested and pulse width limited by maximum junction temperature 175oC (initial temperature Tj=25oC).
A
mJ
Copyright © Sinopower Semiconductor Inc.
Rev. A.3 - November, 2018
2
www.sinopowersemi.com


Part Number SM4070NHKP
Description N-Channel MOSFET
Maker Sinopower
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