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SM6002NAF Datasheet Preview

SM6002NAF Datasheet

N-Channel Enhancement Mode MOSFET

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SM6002NAF
®
N-Channel Enhancement Mode MOSFET
Features
60V/82Aa,
RDS(ON)= 8.0m(max.) @ VGS=10V
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
S
D
G
Top View of TO-220
D
Synchronous Rectification.
Power Management in Inverter Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
SM6002NA
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube (50ea/Tube)
Assembly Material
G : Halogen and Lead Free Device
SM6002NA F : SM6002NA
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2014
1
www.sinopowersemi.com




Sinopower

SM6002NAF Datasheet Preview

SM6002NAF Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SM6002NAF
®
Absolute
Maximum
Ratings
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
60
±25 V
TJ
TST G
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TC=25°C
40
ID Continuous Drain Current
TC=25°C
TC=100°C
82 a
A
51
IDM b Pulsed Drain Current
TC=25°C
320
PD Maximum Power Dissipation
TC=25°C
TC=100°C
113
W
45
RθJC Thermal Resistance-Junction to Case
ID Continuous Drain Current
Steady State
TA=25°C
TA=70°C
1.1 °C/W
11
A
8.5
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2
W
1.28
RθJA Thermal Resistance-Junction to Ambient
IAS c Avalanche Current, Single pulse
Steady State
L=0.5mH
62.5 °C/W
30 A
EAS c Avalanche Energy, Single pulse
L=0.5mH
225 mJ
Note aCalculated continuous current based on maximum allowable junction temperature. Bonding wire limitation
current is 80A.
Note bPulse width limited by max. junction temperature.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2014
2
www.sinopowersemi.com


Part Number SM6002NAF
Description N-Channel Enhancement Mode MOSFET
Maker Sinopower
Total Page 11 Pages
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