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SM6002NSF Datasheet Preview

SM6002NSF Datasheet

N-Channel Enhancement Mode MOSFET

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SM6002NSF
®
N-Channel Enhancement Mode MOSFET
Features
· 60V/80A,
RDS(ON)=8mW (max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
GDS
Top View of TO-220
D
· Synchronous Rectification.
· Power Management in Inverter Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
SM6002NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM6002NS F : SM6002N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
1
www.sinopowersemi.com




Sinopower

SM6002NSF Datasheet Preview

SM6002NSF Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SM6002NSF
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RqJC Thermal Resistance-Junction to Case
RqJA Thermal Resistance-Junction to Ambient
EAS Avalanche Energy, Single Pulsed (L=0.1mH)
Note* Current limited by bond wire.
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
®
Rating
60
±25
175
-55 to 175
80
300
80*
76
150
75
1
62.5
100
Unit
V
°C
A
A
A
W
°C/W
mJ
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
SM6002NSF
Unit
Min. Typ. Max.
VGS=0V, IDS=250mA
VDS=48V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±25V, VDS=0V
VGS=10V, IDS=40A
60
-
-
2
-
-
- -V
-1
- 30 mA
3 4V
- ±100 nA
6.5 8 mW
ISD=20A, VG S=0V
ISD=40A, dlSD/dt=100A/ms
-
-
-
0.8 1.3 V
50 - ns
90 - nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - November, 2013
2
www.sinopowersemi.com


Part Number SM6002NSF
Description N-Channel Enhancement Mode MOSFET
Maker Sinopower
Total Page 10 Pages
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