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SM6017NSF Datasheet Preview

SM6017NSF Datasheet

N-Channel Enhancement Mode MOSFET

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SM6017NSF
®
N-Channel Enhancement Mode MOSFET
Features
60V/110A**,
RDS(ON)=8m(max.) @ VGS=10V
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
S
D
G
Top View of TO-220
D
Synchronous Rectification.
Power Management in Inverter Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
SM6017NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube
Assembly Material
G : Halogen and Lead Free Device
SM6017NS F : SM6017N
XXXXX
XXXXX - Date Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - Feb., 2011
1
www.sinopowersemi.com




Sinopower

SM6017NSF Datasheet Preview

SM6017NSF Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SM6017NSF
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
Mounted on Large Heat Sink
60
±25
175
-55 to 175
V
°C
IS Diode Continuous Forward Current
TC=25°C
80 A
IDP 300µs Pulse Drain Current Tested
TC=25°C
390*
A
ID
Continuous Drain Current(Silicon Limited)
TC=25°C
TC=100°C
110**
80**
A
ID Continuous Drain Current(Wire Bond Limited) TC=25°C
80 A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
176
W
88
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
0.85
°C/W
62.5
EAS Avalanche Energy, Single Pulsed
L=2mH
1.0 J
Note * Pulse width limited by safe operating area.
** Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation
current is 80A.
Electrical Characteristics
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON) a
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Test Conditions
SM6017NSF
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
VDS=48V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=40A
60
-
-
2
-
-
- -V
-1
µA
- 30
3 4V
- ±100 nA
6.5 8 m
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - Feb., 2011
2
www.sinopowersemi.com


Part Number SM6017NSF
Description N-Channel Enhancement Mode MOSFET
Maker Sinopower
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