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SM8401CSQ Datasheet Preview

SM8401CSQ Datasheet

MOSFET

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SM8401CSQ
®
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
N Channel (Integrated Schottky Diode)
30V/6.9A,
R
DS(ON)
=
29m
(max.)
@
V
GS
=
10V
RDS(ON) = 42m(max.) @ VGS = 4.5V
RDS(ON) = 50m(max.) @ VGS = 4V
P Channel
-30V/-5.9A,
RDS(ON) = 40m(max.) @ VGS =-10V
R
DS(ON)
=
60m
(max.)
@
V
GS
=-4.5V
RDS(ON) = 68m(max.) @ VGS =-4V
100% UIS Tested
Reliable and Rugged
Lead Free Available (RoHS Compliant)
ESD Protection pass 2KV
Applications
Synchronous Rectification.
Motor Control.
Fan Application.
Pin Description
D1D1D2D2
G2
S1G1S2
Top View of DFN3x3-8(NP)
(8) (7)
D1 D1
(6) (5)
D2 D2
(2) (4)
G1 G2
S1
(1)
N-Channel MOSFET
S2
(3)
P-Channel MOSFET
Ordering and Marking Information
SM8401CS
SM8401CS Q :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
8401C
XXXXX
Package Code
Q : DFN3x3-8(NP)
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - September, 2014
1
www.sinopowersemi.com




Sinopower

SM8401CSQ Datasheet Preview

SM8401CSQ Datasheet

MOSFET

No Preview Available !

SM8401CSQ
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
N Channel P Channel Unit
Common Ratings
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
30 -30
V
±20 ±20
TJ
TSTG
IS
ID
IDM a
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
PD Power Dissipation
TA=25°C
TA=25°C
TA=25°C
TA=25°C
TA=70°C
150
-55 to 150
1.2 -1.2
6.9 -5.9
12 -12
2d
1.3 d
2d
1.3 d
°C
A
W
RθJA Thermal Resistance-Junction to Ambient
t 10s
Steady State b
60
90
60
°C/W
90
IAS c Avalanche Current, Single pulse
L=0.1mH
13 16 A
EAS c Avalanche Energy, Single pulse
L=0.1mH
8 13 mJ
Note aPulse width limited by max. junction temperature.
Note bRθJA steady state t=100s. RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note dt < 10s.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - September, 2014
2
www.sinopowersemi.com


Part Number SM8401CSQ
Description MOSFET
Maker Sinopower
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