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MBR2535CT Datasheet Preview

MBR2535CT Datasheet

Low IRRM Schottky Barrier Diodes

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MBR2530CT thru MBR2540CT
High Tjm Low IRRM Schottky Barrier Diodes
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
MBR2530CT
MBR2535CT
MBR2540CT
VRRM
V
30
35
40
VRMS
V
21
24.5
28
VDC
V
30
35
40
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=130oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF
Maximum Forward Voltage
(Per Leg) At (Note 1)
IF=15A
IF=15A
IF=30A
IF=30A
@TJ=25oC
@TJ=125oC
@TJ=25oC
@TJ=125oC
Maximum Ratings
30
150
10000
-
-
0.82
0.73
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
@TJ=125oC
ROJC
CJ
TJ
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
0.2
40
1.5
450
-55 to +150
-55 to +175
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliant
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
Unit
A
A
V/us
V
mA
oC/W
pF
oC
oC
P1
©2008 SIRECTIFIER All rights reserved,
www.sirectifier.com
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com




Sirectifier

MBR2535CT Datasheet Preview

MBR2535CT Datasheet

Low IRRM Schottky Barrier Diodes

No Preview Available !

MBR2530CT thru MBR2540CT
High Tjm Low IRRM Schottky Barrier Diodes
FIG.1 - FORWARD CURRENT DERATING CURVE
40
30
20
10
RESISTIVE OR
INDUCTIVE LOAD
0
25 50
75
100 125
CASE TEMPERATURE , C
150
175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
2 5 10
20
50
NUMBER OF CYCLES AT 60Hz
100
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100.0
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
TJ = 125 C
10.0
10 TJ = 150 C
1.0 TJ = 75 C
1.0 TJ = 25 C
0.1
TJ = 25 C
0.01
0.001
0 20 40 60 80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
0.1
0.01
0
PULSE WIDTH 300us
2% Duty cycle
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
0.9
10000
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
0.1
TJ = 25 C, f= 1MHz
1 4 10
REVERSE VOLTAGE , VOLTS
100
P2
©2008 SIRECTIFIER All rights reserved,
www.sirectifier.com
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com


Part Number MBR2535CT
Description Low IRRM Schottky Barrier Diodes
Maker Sirectifier
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MBR2535CT Datasheet PDF






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