MBR40100PT Description
MBR40100PT High Tjm (+175oC) Schottky Barrier Diodes AC A C(TAB) A C A A=Anode, C=Cathode, TAB=Cathode MBR40100PT VRRM V 100 VDC V 100 Dimensions TO-247AD Dim. 300us Pulse Width, Duty Cycle 2%. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
MBR40100PT Key Features
- Metal of silicon rectifier, majority carrier conducton
- Guard ring for transient protection
- Low power loss, high efficiency
- High current capability, low VF
- High surge capacity
- For use in low voltage, high frequency inverters, free whelling, and polarity protection
MBR40100PT Applications
- Case: TO-247AD molded plastic