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MUR8100 Datasheet Ultra Fast Recovery Diodes

Manufacturer: Sirectifier

Overview: MUR8100 Ultra Fast Recovery Diodes C A Dimensions TO-220AC A C Dim. A B C D E F G H J K L M N Q C(TAB) A=Anode, C=Cathode, TAB=Cathode MUR8100 VRSM V 1000 VRRM V 1000 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=100oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 25 12 150 75 80 65 70 28 27 21 20 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque o C 78 0.4...0.6 2 W Nm g MUR8100 Ultra Fast Recovery Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=12A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 250 150 4 2.1 2.7 1.67 33.6 1.6 0.5 60 Unit uA uA mA V V m K/W IR VF VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC _ VR=540V; IF=12A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C o 50 6.5 60 7.

Datasheet Details

Part number MUR8100
Manufacturer Sirectifier
File Size 147.86 KB
Description Ultra Fast Recovery Diodes
Download MUR8100 Download (PDF)

Key Features

  • International standard package JEDEC TO-220AC.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.