SDD253 Description
g SDD253 Diode-Diode Modules Symbol Test Conditions IR VF VTO rT QS IRM RthJC RthCH dS dA a TVJ=TVJM; TVJ=25oC For power-loss calculations only TVJ=TVJM per diode; DC current per module per diode;.
SDD253 Key Features
- International standard package
- Copper base plate with inter-DCB
- Planar passivated chips
- Isolation voltage 3600 V~
SDD253 Applications
- Supplies for DC power equipment
- DC supply for PWM inverter
- Field supply for DC motors