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HUR1530S Datasheet High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Manufacturer: Sirectifier Semiconductors

Overview: HUR1520S, HUR1530S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC www.DataSheet4U.com A=Anode, Dimensions TO-263(D2PAK) C Dim. A A1 b b2 c c2 D D1 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 NC= No connection, TAB=Cathode E E1 e L L1 L2 L3 L4 R 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 HUR1520S HUR1530S VRSM V 200 300 VRRM V 200 300 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=135oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=2.5A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 35 15 140 0.8 0.3 -55...+175 175 -55...+150 95 0.4...0.6 2 Unit A A mJ A o C W Nm g HUR1520S, HUR1530S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=15A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 100 0.5 1.21 1.68 1.6 0.5 Unit uA mA V K/W ns IR VF www.DataSheet4U.com RthJC RthCH trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C o 30 2.

Download the HUR1530S datasheet PDF. This datasheet also includes the HUR1520S variant, as both parts are published together in a single manufacturer document.

Datasheet Details

Part number HUR1530S
Manufacturer Sirectifier Semiconductors
File Size 270.83 KB
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Download HUR1530S Download (PDF)

Key Features

  • International standard package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.

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