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Sirectifier Semiconductors

MBR10150 Datasheet Preview

MBR10150 Datasheet

Schottky Barrier Rectifiers

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MBR10150 thru MBR10200
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
C(TAB)
A
A
C
C
A=Anode, C=Cathode, TAB=Cathode
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MBR10150
MBR10200
VRRM
V
150
200
VRMS
V
105
140
VDC
V
150
200
Dimensions TO-220AC
Symbol
Test Conditions
IFAV TC=125oC; rectangular, d=0.5
IFSM TVJ=45oC; tp=10ms (50Hz), sine
IAR VA=1.5.VRRM typ.; f=10kHz; repetitive
(dv/dt)cr
TVJ
TVJM
Tstg
Md mounting torque
Weight typical
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Maximum Ratings
10
150
0.8
10000
-65...+150
150
-65...+175
0.4...0.6
2
Unit
A
A
A
V/us
oC
Nm
g
Symbol
Test Conditions
IR
VF
RthJC
TVJ=25oC; VR=VRRM
TVJ=125oC; VR=VRRM
IF=10A; TVJ=125oC
IF=10A; TVJ=25oC
IF=20A; TVJ=125oC
IF=20A; TVJ=25oC
Characteristic Values
typ. max.
1.0
50
0.80
0.90
0.90
1.00
2.0
Unit
mA
V
K/W
FEATURES
* International standard package
* Very low VF
* Extremely low switching losses
* Low IRM-values
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Free wheeling diode in low voltage
converters
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses




Sirectifier Semiconductors

MBR10150 Datasheet Preview

MBR10150 Datasheet

Schottky Barrier Rectifiers

No Preview Available !

MBR10150 thru MBR10200
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
100
70
50
20
10
7
www.DataSheet4U5.com
TJ = 1505C
TJ = 1255C
TJ = 1005C
10,000
1,000
100
10
1
T J = 125C
T J = 100C
T J = 150C
TJ = 255C
2
1
0.2
0.4 0.6
0.8
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1
F igure 1. yTpic al F orward oVltage (P er L eg)
40
36
32
TJ = 1255C
28
24
20
16
12
8
4
0 IPK
IAV = 20
SQUAR E
WAV E
10
dc
0.1
0.01
0
25
20
T J = 25C
20 40 60 80 100 120 140 160 180 200
VR, REVERSE CURRENT (VOL TS)
F igure 2. yTpic al R evers e C urrent (P er L eg)
R AT E D V OLTA G E
R J C = 2C /W
15
SQUAR E
dc
WAV E
10
5
0
5
10
15
20
25
30
35
0
90
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
F igure 3. F orward P ower Dis s ipation
20
16
12
8
4
dc
0
R J A = 16C /W
R AT E D V OLTA G E
500
400
300
SQUAR E
WAV E
200
100 110 120 130 140 150
TC, CASE TEMPERATURE (5C)
F igure 4. C urrent Derating, C as e
160
TJ = 255C
100
0
0 25 50 75 100 125 150 175 1 2
5 10 20
50 70 100
TA, AMBIENT TEMPERATURE (5C)
VR, REVERSE VOL TAGE (VOLTS)
F igure 5. C urrent Derating, A mbient
F igure 6. yTpic al C apac itanc e (P er L eg)


Part Number MBR10150
Description Schottky Barrier Rectifiers
Maker Sirectifier Semiconductors
PDF Download

MBR10150 Datasheet PDF





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