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MBR850 - Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Datasheet Summary

Features

  • Metal of silicon rectifier, majority carrier conducton.
  • Guard ring for transient protection.
  • Low power loss, high efficiency.
  • High current capability, low VF.
  • High surge capacity.
  • For use in low voltage, high frequency inverters, free whelling, and polarity protection.

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Datasheet preview – MBR850

Datasheet Details

Part number MBR850
Manufacturer Sirectifier Semiconductors
File Size 111.26 KB
Description Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Datasheet download datasheet MBR850 Datasheet
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www.DataSheet4U.com MBR850 thru MBR860 Dimensions TO-220AC A C Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers C(TAB) A C A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 VRMS V 35 42 VDC V 50 60 MBR850 MBR860 Symbol I(AV) IFSM dv/dt VF Characteristics Maximum Average Forward Rectified Current @TC=125oC Maximum Ratings 8 150 10000 IF=8A @TJ=125oC IF=8A @TJ=25oC IF=16A @TJ=25oC @TJ=25oC @TJ=125oC 0.70 0.
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