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S1PDB122 Datasheet Single Phase Bridge Rectifiers Modules

Manufacturer: Sirectifier Semiconductors

Datasheet Details

Part number S1PDB122
Manufacturer Sirectifier Semiconductors
File Size 63.71 KB
Description Single Phase Bridge Rectifiers Modules
Download S1PDB122 Download (PDF)

Overview

S1PDB122 Single Phase Bridge Rectifiers Modules _ + Type S1PDB122N08 S1PDB122N10 S1PDB122N12 S1PDB122N14 S1PDB122N16 S1PDB122N18 VRSM V 900 1100 1300 1500 1700 1900 VRRM V 800 1000 1200 1400 1600 1800 Dimensions in mm (1mm=0.0394") M6x10 7 94 80 72 26 26 + – 15 54 27 6.5 A + B - ~~ 12 25 66 Symbol Idav Idav o Test Conditions TC=100 C, module TA=35oC (RthCA=0.2K/W), module TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 122 115 1800 1950 1600 1800 16200 16200 12800 13400 -40...+150 150 -40...+125 6.5 C ~ E ~ 3 ~ ~ Unit A IFSM I2t A2s TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s 30 A o C 2500 3000 _ 15% 5+ _ 15% 5+ 270 V~ Nm g Mounting torque (M6) Terminal connection torque (M6) typ.

S1PDB122 Single Phase Bridge Rectifiers Modules Symbol IR VF VTO rT RthJC RthJK dS dA a VR=VRRM; TVJ=25 C VR=VRRM; TVJ=TVJM IF=300A; TVJ=25oC o Test Conditions Characteristic Values _ 0.3 < _5 < _ 1.65 < 0.8 3 Unit mA V V m K/W K/W mm mm m/s2 For power-loss calculations only TVJ=TVJM per diode; 180 per module o 0.65 0.108 0.83 0.138 10 9.4 50 per diode; 180o per module Creeping distance on surface Creepage distance in air Max.

Key Features

  • Package with screw terminals.
  • Isolation voltage 3000 V~.
  • Planar passivated chips.
  • Blocking voltage up to 1800 V.
  • Low forward voltage drop.