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S1PDB52N08 Datasheet Single Phase Bridge Rectifiers Modules

Manufacturer: Sirectifier Semiconductors

Overview: _+ ~ ~ + – ~~ S1PDB52NXX Single Phase Bridge Rectifiers Modules Type S1PDB52N08 S1PDB52N10 S1PDB52N12 S1PDB52N14 S1PDB52N16 S1PDB52N18 VRSM V 900 1100 1300 1500 1700 1900 VRRM V 800 1000 1200 1400 1600 1800 Dimensions in mm (1mm=0.0394") M5x10 7 30 3 21.6 5.3 2.5 5.3 13.3 42 72 60 54 20 2.5 18 20 2.5 ~ ~ + 10 23 48 Symbol Test Conditions Idav TC=100oC, module Idav TA=45oC (RthCA=0.6K/W), module IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ=45oC I2t VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ TVJM Tstg VISOL 50/60Hz, RMS IISOL<_1mA t=1min t=1s Md Mounting torque (M5) Terminal connection torque (M5) Weight typical Maximum Ratings Unit 52 41 A 550 600 500 A 550 1520 1520 1250 A2s 1250 -40...+150 150 oC -40...+125 2500 3000 V~ 5 +_ 15% 5 +_ 15% Nm 148 g P1 ©2008 SIRECTIFIER All rights reserved, www.sirectifier.com Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com S1PDB52NXX Single Phase Bridge Rectifiers Modules Symbol Test Conditions IR VR=VRRM; TVJ=25oC VR=VRRM; TVJ=TVJM VF IF=150A; TVJ=25oC VTO For power-loss calculations only rT TVJ=TVJM RthJC per diode per module RthJK per diode per module dS Creeping distance on surface dA Creepage distance in air a Max. allowable acceleration Characteristic Values <_ 0.3 <_ 5 <_ 1.8 0.8 8 1.45 0.24 1.87 0.31 10 9.

Key Features

  • Package with screw terminals.
  • Isolation voltage 3000 V~.
  • Glass passivated chips.
  • Blocking voltage up to 1800 V.
  • Low forward voltage drop.
  • UL File NO. E310749.
  • RoHS compliant.

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