900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Sirectifier Semiconductors

SDT116GKxx Datasheet Preview

SDT116GKxx Datasheet

Thyristor-Diode Modules

No Preview Available !

www.DataSheet4U.com
STD/SDT116
Thyristor-Diode Modules, Diode-Thyristor Modules
Type
VRSM
VDSM
V
STD/SDT116GK08 900
STD/SDT116GK12 1300
STD/SDT116GK14 1500
STD/SDT116GK16 1700
STD/SDT116GK18 1900
VRRM
VDRM
V
800
1200
1400
1600
1800
Dimensions in mm (1mm=0.0394")
Symbol
Test Conditions
I , ITRMS FRMS TVJ=TVJM
I , ITAVM FAVM TC=85oC; 180o sine
TVJ=45oC
ITSM, IFSM
VR=0
TVJ=TVJM
VR=0
TVJ=45oC
i2dt
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
(di/dt)cr
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.45A
diG/dt=0.45A/us
repetitive, IT=250A
non repetitive, IT=ITAVM
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM
IT=ITAVM
tp=30us
tp=300us
PGAV
VRGM
TVJ
TVJM
Tstg
VISOL
50/60Hz, RMS
IISOL<_1mA
t=1min
t=1s
Md
Mounting torque (M5)
Terminal connection torque (M5)
Weight Typical including screws
Maximum Ratings
180
116
2250
2400
2000
2150
25300
23900
20000
19100
150
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
3000
3600
2.5-4.0/22-35
2.5-4.0/22-35
90
Unit
A
A
A2s
A/us
V/us
W
W
V
oC
V~
Nm/lb.in.
g




Sirectifier Semiconductors

SDT116GKxx Datasheet Preview

SDT116GKxx Datasheet

Thyristor-Diode Modules

No Preview Available !

STD/SDT116
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
VT, VF IT, IF=300A; TVJ=25oC
VTO For power-loss calculations only (TVJ=125oC)
rT
www.DataSheetV4UGT.com VD=6V;
IGT VD=6V;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
VGD TVJ=TVJM;
VD=2/3VDRM
IGD
IL
TVJ=25oC; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us
IH TVJ=25oC; VD=6V; RGK=
tgd
TVJ=25oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
tq
TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS TVJ=TVJM; IT, IF=50A; -di/dt=6A/us
IRM
per thyristor/diode; DC current
RthJC per module
per thyristor/diode; DC current
RthJK per module
dS Creeping distance on surface
dA Strike distance through air
a Maximum allowable acceleration
Characteristic Values
5
1.5
0.8
2.4
2.5
2.6
150
200
0.2
10
Unit
mA
V
V
m
V
mA
V
mA
450 mA
200 mA
2 us
typ. 185 us
170
45
0.22
0.11
0.42
0.21
12.7
9.6
50
uC
A
K/W
K/W
mm
mm
m/s2
FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
ADVANTAGES
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits


Part Number SDT116GKxx
Description Thyristor-Diode Modules
Maker Sirectifier Semiconductors
PDF Download

SDT116GKxx Datasheet PDF





Similar Datasheet

1 SDT116GKxx Thyristor-Diode Modules
Sirectifier Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy