SII200N12 Description
SII200N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") .. Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =200A; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres.
SII200N12 is NPT IGBT manufactured by Sirectifier Semiconductors.
SII200N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") .. Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =200A; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres.