STD130GKxx Key Features
- International standard package
- Copper base plate
- Planar passivated chips
- Isolation voltage 3600 V~
- Part: STD130GKxx
- Manufacturer: Sirectifier Semiconductors
- Size: 493.54 KB
Other STD130GKxx Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Kodenshi AUK Group |
STD13003 | NPN Silicon Power Transistor |
STMicroelectronics |
STD13003 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
Kodenshi AUK Group |
STD13003D | NPN Silicon Power Transistor |
|
Kodenshi AUK Group |
STD13003L | NPN Silicon Power Transistor |
|
Kodenshi AUK Group |
STD13003Q | NPN Silicon Power Transistor |
STD130GKxx Description
Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; g Mounting torque (M6) Terminal connection torque (M6) Typical including screws STD/SDT130 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values 10 1.36 0.8 1.5 VD=6V; o Unit mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2 IRRM, IDRM TVJ=TVJM;.