STD/SDT130
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
VT, VF IT, IF=300A; TVJ=25oC
VTO For power-loss calculations only (TVJ=125oC)
rT
www.DataSheetV4UGT.com VD=6V;
IGT VD=6V;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
VGD TVJ=TVJM;
VD=2/3VDRM
IGD
IL
TVJ=25oC; tp=30us; VD=6V
IG=0.5A; diG/dt=0.5A/us
IH TVJ=25oC; VD=6V; RGK=
tgd
TVJ=25oC; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
tq
TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
IRM
per thyristor/diode; DC current
RthJC per module
per thyristor/diode; DC current
RthJK per module
dS Creeping distance on surface
dA Strike distance through air
a Maximum allowable acceleration
Characteristic Values
10
1.36
0.8
1.5
2.5
2.6
150
200
0.2
10
Unit
mA
V
V
m
V
mA
V
mA
300 mA
200 mA
2 us
typ. 150 us
550
235
0.23
0.115
0.33
0.165
12.7
9.6
50
uC
A
K/W
K/W
mm
mm
m/s2
FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
