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Sirectifier Semiconductors
Sirectifier Semiconductors

STPR810DF Datasheet Preview

STPR810DF Datasheet

Ultra Fast Recovery Diodes

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STPR810DF pdf
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STPR805DF thru STPR820DF
Ultra Fast Recovery Diodes
C(TAB)
A
A
C
C
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRMS
VDC
V VV
STPR805DF 50
35 50
STPR810DF 100
70 100
STPR815DF 150 105 150
STPR820DF 200 140 200
Dimensions TO-220AC
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=100oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
VF Maximum Forward Voltage At 8.0A DC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
@TJ=100oC
CJ Typical Junction Capacitance (Note 1)
TRR Maximum Reverse Recovery Time (Note 2)
ROJC Typical Thermal Resistance (Note 3)
TJ, TSTG Operating And Storage Temperature Range
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
Maximum Ratings
8.0
125
0.95
5
500
110
35
2.5
-55 to +150
Unit
A
A
V
uA
pF
ns
oC/W
oC
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any



Sirectifier Semiconductors
Sirectifier Semiconductors

STPR810DF Datasheet Preview

STPR810DF Datasheet

Ultra Fast Recovery Diodes

No Preview Available !

STPR810DF pdf
www.DataSheet4U.com
STPR805DF thru STPR820DF
Ultra Fast Recovery Diodes
FIG.1 - FORWARD CURRENT DERATING CURVE
10
WITH HEAT SINK TC
8
6
4 FREE AMBIENT TA
2
RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125 150
CASE TEMPERATURE , C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
2 5 10
20
50
NUMBER OF CYCLES AT 60Hz
100
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ = 125 C
TJ = 100 C
1.0
TJ = 75 C
0.1 TJ = 25 C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
TJ = 125 C
50-200V
300-400V
500-600V
10
1.0 TJ = 25 C
0.1
0
PULSE WIDTH 300us
2% Duty cycle
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
1.8
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
50-400V
100
500-600V
TJ = 25 C, f= 1MHz
10
0.1
1 4 10
REVERSE VOLTAGE , VOLTS
100


Part Number STPR810DF
Description Ultra Fast Recovery Diodes
Maker Sirectifier Semiconductors
Total Page 2 Pages
PDF Download
STPR810DF pdf
STPR810DF Datasheet PDF
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