SBW-5089 Datasheet | Sirenza Microdevices

Description The SBW-5089(Z) is a high performance In Ga P/Ga As HBT MMIC Amplifier. A Darlington circuit fabricated with In Ga P process technology provides broadband RF performance up to 8 GHz and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in high suppression of intermodulation products. Operation requires only a single positive voltage supply, 2 DC-blocking capacitors, a bias resistor and an RF choke. The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. The package body is manufactured with green molding pounds that contain no antimony trioxide or halogenated fire retardants. Gain & Return Loss vs. Frequency ID= 80 m A (Typ.) Tuned Application Circuit (fig.1) -5 Gain SBW-5089Z Pb Ro HS pliant & Green Package DC-8 GHz Cascadable In Ga P/Ga As HBT MMIC Amplifier Product Features - Available in Lead Free, Ro HS pliant green package ( Z Suffix ) - 50 Ohm Cascadable Gain Block - Wideband Flat Gain to 3 GHz: +/-1.4d B - P1d B = 13.4 @ 6 GHz - Input / Output VSWR < 2:3 to 8 GHz - Patented Thermal Design - Single Voltage Supply Operation Gain (d B) Return Loss (d B) -10 -15 -20 -25 Frequency (GHz) Applications...