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SBW-5089 Datasheet Preview

SBW-5089 Datasheet

Cascadable InGaP/GaAs HBT MMIC Amplifier

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Preliminary Data Sheet
Product Description
Sirenza Microdevices’ SBW-5089 is a high performance
InGaP/GaAs Heterojunction Bipolar Transistor MMIC
Amplifier. A Darlington configuration designed with InGaP
process technology provides broadband performance up to
8 GHz with excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. Only a single positive supply voltage, DC-blocking
capacitors, a bias resistor, and an optional RF choke are
required for operation.
Gain & Return Loss Vs. Frequency
See App Circuit Page 6
30
20
10 S21
0
-10 S22
-20 S11
-30
012345678
Frequency (GHz)
SBW-5089
DC-8 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• Wideband Flat Gain to 3GHz: +/-1.4dB
• P1dB = 13.4 @ 6GHz
• Input / Output VSWR < 2:3 to 8GHz
• Operates From Single Supply
• Low Thermal Resistance
• Darlington Configuration
Applications
• Wideband Instrumentation
• Fiber Optic Driver
• OC-48
• Basestation
• SAT COM
Symbol
Parameter
Units
Frequency
Min.
Typ. Max.
G
Small Signal Gain
( PC board and connector losses de-embeded )
850 MHz
19.3
20.3
21.3
dB
3000 MHz
4200 MHz
17.0
16.2
18.0
17.2
19.0
18.2
6000 MHz
14.5
15.5
16.5
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
18.4
20.1
19.4
OIP3
Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
32.0
35.5
34.0
Pout
Output Power @ -45dBc ACP IS-95
9 Forward Channels
dBm
1950MHz
13.0
Bandwidth Determined by Return Loss (>10dB)
MHz
6000
IRL Worst case Input Return Loss
dB DC-6000MHz 7
10
ORL
Worst case Output Return Loss
dB DC-6000MHz 8
11
NF Noise Figure
dB 1950 MHz
3.9 4.4
VD Device Operating Voltage
V
4.5 4.9
5.3
ID Device Operating Current
mA
72 80 88
RTH, j-l Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V
RBIAS = 39 Ohms
ID = 80 mA Typ.
TL = 25ºC
°C/W
97
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no
responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or
licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-
support devices and/or system.Copyright 2003 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-103325 Rev. A




Sirenza Microdevices

SBW-5089 Datasheet Preview

SBW-5089 Datasheet

Cascadable InGaP/GaAs HBT MMIC Amplifier

No Preview Available !

PreliminaryPDrealtiamSinhaereyt
SBW-5089 Wideband DC-8 GHz MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
Unit 500
FreFqrueqenuceync(My H(MzH) z)
850
1950
2400
3500
5800*
G Small Signal Gain
dB 20.5 20.3 19.1 18.7 17.3 15.1
OIP3 Output Third Order Intercept Point dBm 36.5 35.5 34.0 33.0 30.5 25.5
P1dB Output Power at 1dB Compression dBm 20.2 20.1 19.4 19.4 17.5 13.4
IRL Input Return Loss
dB 26 26 19 15 12 12.5
ORL Output Return Loss
dB 19 17.5 12
11 10.5 10.9
S21 Reverse Isolation
dB 22 23 23 23 23 23
NF Noise Figure
dB 3.6 3.6 3.9 3.9 4.1 4.3
*TNeOsTtET:Ce5os.8tnGCdHizotindoadntiatsimo:neasRVs:SBuIr=AeSd8=VdRwV3BiSBthI9=mAStOu8=nhVe3md9aspOphcmircTIsDuLit==
8I0D m= A80TmypA.
25ºC
TL = 25ºC
Typ.
OIP3OTIoPn3eToSnpeacSinpgac=in1g M= H1zM, HPzo,utPpoeurt tpoenreto=ne0d=B0m
ZS =ZZSL==Z5L0=O5h0mOshms
Basic Application Circuit
Absolute Maximum Ratings
P1dB vs. Frequency
Parameter
Absolute Limit
25
22.5
Max. Device Current (ID)
130 mA
+25c
20
-40c
Max. Device Voltage (VD)
6V
+85c
Max. RF Input Power
+17 dBm
17.5
Max Operating Dissipated Power
0.65 W
15
Max. Junction Temp. (TJ)
+150°C
12.5
Operating Temp. Range (TL)
-40°C to +85°C
10
Max. Storage Temp.
+150°C
7.5
5
0123456
Frequency(GHz)
ESD
Class 1C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
TL=TLEAD
40
37.5
35
32.5
30
27.5
25
22.5
20
17.5
15
0
OIP3 vs. Frequency
+25c
-40c
+85c
123456
Frequency(GHz)
Noise Figure vs. Frequency
8
+25c
7 -40c
6 +85c
5
4
3
2
1
0
0123456
Frequency(GHz)
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103325 Rev. A


Part Number SBW-5089
Description Cascadable InGaP/GaAs HBT MMIC Amplifier
Maker Sirenza Microdevices
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