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SGA-5389 - Cascadable SiGe HBT MMIC Amplifier

Download the SGA-5389 datasheet PDF. This datasheet also covers the SGA-5389Z variant, as both devices belong to the same cascadable sige hbt mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The SGA-5389 is a high performance SiGe HBT MMIC Amplifier.

A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance.

Key Features

  • post annealing process to mitigate tin whisker formation and is.
  • Now available in Lead Free, RoHS RoHS compliant per EU Directive 2002/95. This package is also Compliant, & Green Packaging manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
  • High.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGA-5389Z_SirenzaMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGA-5389
Manufacturer Sirenza Microdevices
File Size 89.02 KB
Description Cascadable SiGe HBT MMIC Amplifier
Datasheet download datasheet SGA-5389 Datasheet

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Other Datasheets by Sirenza Microdevices

Part Number Description
SGA-5389Z Cascadable SiGe HBT MMIC Amplifier
SGA-5386Z Cascadable SiGe HBT MMIC Amplifier
SGA-5263 Cascadable SiGe HBT MMIC Amplifier
SGA-5263Z Cascadable SiGe HBT MMIC Amplifier
SGA-5286 Cascadable SiGe HBT MMIC Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SGA-5389 Product Description SGA-5389Z Pb RoHS Compliant & Green Package The SGA-5389 is a high performance SiGe HBT MMIC Amplifier. DC-4500 MHz, Cascadable A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction SiGe HBT MMIC Amplifier increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non- linearities results in higher suppression of intermodulation prod- ucts. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation.